JANSH2N2222AUB
TRANS NPN 50V 0.8A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANSH2N2222AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V, it provides robust performance. The transistor features a low collector cutoff current of 50nA and a Vce(sat) of 1V at 50mA collector current. Operating across a temperature range of -65°C to 200°C, this device is housed in a 4-SMD, No Lead (UB) package, suitable for surface mounting. Its MIL-PRF-19500/255 qualification signifies its suitability for aerospace, defense, and other high-reliability systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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