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JANSH2N2222AUB

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JANSH2N2222AUB

TRANS NPN 50V 0.8A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANSH2N2222AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V, it provides robust performance. The transistor features a low collector cutoff current of 50nA and a Vce(sat) of 1V at 50mA collector current. Operating across a temperature range of -65°C to 200°C, this device is housed in a 4-SMD, No Lead (UB) package, suitable for surface mounting. Its MIL-PRF-19500/255 qualification signifies its suitability for aerospace, defense, and other high-reliability systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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