JANSH2N2222AUA/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N2222AUA-TR is an NPN bipolar junction transistor designed for high-reliability applications. This surface mount device features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA, with a maximum power dissipation of 650mW. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. It is specified with a Vce(sat) of 1V at 50mA base current and 500mA collector current, and a collector cutoff current (Icbo) of 50nA. Operating across an extended temperature range of -65°C to 200°C, this component meets MIL-PRF-19500/255 qualification standards, making it suitable for demanding military and aerospace environments. The device is supplied in a 4-SMD, No Lead UA package, presented in Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |
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