JANSH2N2222AL
TRANS NPN 50V 0.8A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N2222AL is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This military-grade component, qualified under MIL-PRF-19500/255, features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 800mA. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. With a maximum power dissipation of 500mW and a saturation voltage (Vce(sat)) of 1V at 50mA/500mA, it is suitable for demanding environments. The JAN2N2222AL is housed in a TO-18 (TO-206AA) 3-lead metal can package, facilitating through-hole mounting. Its wide operating temperature range of -65°C to 200°C makes it ideal for aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |