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JANSH2N2219AL

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JANSH2N2219AL

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSH2N2219AL is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component is housed in a TO-205AA (TO-5-3 Metal Can) package. It features a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 50 V. The transistor offers a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. With a maximum power dissipation of 800 mW and an operating temperature range of -55°C to 200°C, the JANSH2N2219AL meets MIL-PRF-19500/251 qualification, making it suitable for demanding military and industrial environments. It is also utilized in aerospace and high-performance electronic systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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