JANSH2N2219A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSH2N2219A is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 800mA. It features a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage, with a Vce(sat) of 1V at 50mA base current and 500mA collector current. The device dissipates a maximum power of 800mW and operates across a wide temperature range of -55°C to 200°C. This transistor is commonly utilized in industrial, military, and aerospace sectors for its robust performance characteristics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |