JANSH2N2218AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSH2N2218AL is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA, with a power dissipation of 800mW. It offers a guaranteed minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor exhibits a Vce saturation of 1V at 50mA and 500mA, and a collector cutoff current of 10nA. The JANSH2N2218AL is housed in a TO-205AA (TO-5-3 Metal Can) through-hole package. This military-grade component, qualified to MIL-PRF-19500/251, operates across a wide temperature range of -55°C to 200°C (TJ). It finds application in various high-reliability sectors including aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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