JANSG2N2222AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSG2N2222AUB is an NPN bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/255, features a collector current capability of up to 800 mA and a collector-emitter breakdown voltage of 50 V. With a maximum power dissipation of 500 mW and a low collector cutoff current of 50 nA, it offers reliable performance in environments with extreme temperature variations, operating from -65°C to 200°C. The device exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. This surface-mount transistor, housed in a 3-SMD, No Lead UB package, finds application in military and aerospace systems, as well as high-reliability industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |