JANSG2N2222AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSG2N2222AUA is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface mount device, packaged in a UA (4-SMD, No Lead) configuration, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a power dissipation rating of 650mW and a wide operating temperature range of -65°C to 200°C, it meets stringent military specifications, including MIL-PRF-19500/255 qualification. The minimum DC current gain (hFE) is 100 at 150mA and 10V. The JANSG2N2222AUA is suitable for use in demanding aerospace, defense, and industrial sectors requiring robust performance in extreme environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |