JANSG2N2222A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSG2N2222A is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole TO-18 (TO-206AA) packaged device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. With a maximum power dissipation of 500mW and an extended operating temperature range of -65°C to 200°C, the JANSG2N2222A is suitable for use in industrial control, aerospace, and defense systems. Key electrical specifications include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 1V at 50mA and 500mA. The device exhibits a collector cutoff current of 50nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
JANS2N5666U3
TRANS NPN 200V 5A U3
2C3999
POWER BJT
