JANSG2N2221AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSG2N2221AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, packaged as UB (3-SMD, No Lead), offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 800 mA. With a maximum power dissipation of 500 mW and a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, it provides robust performance for signal amplification and switching. The transistor’s operating temperature range of -65°C to 200°C (TJ) and its MIL-PRF-19500/255 qualification highlight its suitability for military and high-reliability industrial environments. Key parameters include a Vce saturation of 1V at 50mA/500mA and a collector cutoff current of 50 nA. This component is commonly utilized in aerospace, defense, and industrial control systems requiring dependable transistor functionality.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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