JANSG2N2221AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSG2N2221AUA is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component, housed in a 4-SMD, No Lead (UA) package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. It features a power dissipation rating of 650mW and a low saturation voltage of 1V at 50mA/500mA. The minimum DC current gain (hFE) is 40 at 150mA and 10V. This military-grade device, qualified to MIL-PRF-19500/255, operates across a wide temperature range of -65°C to 200°C. It finds application in aerospace, defense, and high-reliability industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |