JANSF2N7373
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSF2N7373 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-254AA package, offers a continuous collector current of 5 A and a collector-emitter breakdown voltage of 80 V. With a maximum power dissipation of 4 W and a wide operating temperature range of -65°C to 200°C, it is suitable for demanding environments. The JANSF2N7373 features a minimum DC current gain (hFE) of 70 at 2.5A and 5V, and a Vce saturation of 1.5V at 500mA and 5A. This device meets MIL-PRF-19500/613 qualification standards, making it a robust choice for military and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-254AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 4 W |
| Qualification | MIL-PRF-19500/613 |
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