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JANSF2N5153U3/TR

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JANSF2N5153U3/TR

RH POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSF2N5153U3-TR is a PNP bipolar junction transistor designed for high-reliability applications. This military-grade component, qualified under MIL-PRF-19500/545, offers a collector-emitter breakdown voltage of 80V and a continuous collector current of up to 2A. With a maximum power dissipation of 1.16W and a collector cutoff current of 50µA, it provides a minimum DC current gain (hFE) of 70 at 2.5A and 5V. The transistor features a low Vce(sat) of 1.5V at 500mA and 5A, ensuring efficient operation. It is supplied in a U3 surface mount package, delivered on a tape and reel for automated assembly. This component is suitable for use in demanding aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 5A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2.5A, 5V
Frequency - Transition-
Supplier Device PackageU3
GradeMilitary
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1.16 W
QualificationMIL-PRF-19500/545

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