JANSF2N4449
TRANS NPN 20V TO46Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSF2N4449 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 20V and a maximum power dissipation of 360mW. It offers a minimum DC current gain (hFE) of 20 at 100mA and 1V. The JANSF2N4449 operates within a wide temperature range of -65°C to 200°C. Packaged in a TO-46 (TO-206AB) metal can, this device is suitable for through-hole mounting. With its MIL-PRF-19500/317 qualification and military grade, it is commonly found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 (TO-206AB) |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |
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