JANSF2N3700UB
TRANS NPN 80V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSF2N3700UB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This high-reliability component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 500mW and a wide operating temperature range from -65°C to 200°C, it is suitable for military and industrial environments. The device offers a minimum DC current gain (hFE) of 50 at 500mA collector current and 10V collector-emitter voltage. Key parameters include a collector cutoff current of 10nA and a Vce(sat) of 500mV at 50mA base current and 500mA collector current. The JANSF2N3700UB is supplied in a UB package, utilizing surface mount technology. Its qualification under MIL-PRF-19500/391 underscores its suitability for aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-LCC |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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