JANSF2N3700
TRANS NPN 80V 1A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSF2N3700 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage (Vceo) of 80V and a continuous collector current (Ic) capability of 1A. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 500mW, it offers a saturation voltage (Vce(sat)) of 500mV at 50mA base current and 500mA collector current. The JANSF2N3700 is packaged in a TO-18 (TO-206AA) metal can with through-hole mounting. It operates across an extended temperature range of -65°C to 200°C. This device meets the stringent qualification requirements of MIL-PRF-19500/391, making it suitable for demanding environments within aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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