JANSF2N3635UB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANSF2N3635UB is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This surface-mount component features a 140 V collector-emitter breakdown voltage and a maximum collector current of 1 A, with a power dissipation capability of 1 W. Engineered to meet stringent military specifications, it is qualified under MIL-PRF-19500/357, ensuring performance in demanding environments. The device exhibits a minimum DC current gain (hFE) of 100 at 50mA and 10V. Its saturation voltage is specified at a maximum of 600mV at 5mA base current and 50mA collector current. Operating temperature ranges from -65°C to 200°C. This component finds application in various military and aerospace systems requiring robust small-signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |