JANSF2N3019
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANSF2N3019 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/391, features an 80 V collector-emitter breakdown voltage and a maximum collector current of 1 A. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers robust amplification characteristics. The transistor is packaged in a TO-205AA (TO-5-3 Metal Can) through-hole configuration, suitable for demanding thermal environments with an operating temperature range of -65°C to 200°C. Maximum power dissipation is rated at 800 mW. This device is commonly utilized in aerospace, defense, and industrial control systems where performance and environmental ruggedness are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |
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