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JANSF2N2907AUB

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JANSF2N2907AUB

TRANS PNP 60V 0.6A 3SMD

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSF2N2907AUB is a PNP bipolar junction transistor with a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. This military-grade component, qualified to MIL-PRF-19500/291, features a minimum DC current gain (hFE) of 100 at 150mA and 10V. The device offers a maximum power dissipation of 500mW and a 3-SMD, No Lead package (UBC) suitable for surface mounting. Operating across a wide temperature range of -65°C to 200°C, it exhibits a Vce saturation of 1.6V at 50mA/500mA and a collector cutoff current of 50nA. This transistor is commonly utilized in aerospace, defense, and high-reliability industrial applications demanding robust performance.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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