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JANSF2N2906AUBC/TR

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JANSF2N2906AUBC/TR

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSF2N2906AUBC-TR is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This JANS-qualified component, adhering to MIL-PRF-19500/291 standards, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. With a maximum power dissipation of 500mW and a minimum DC current gain (hFE) of 40 at 150mA and 10V, it provides reliable switching and amplification characteristics. The saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA base current and 500mA collector current. Operating across an extended temperature range of -65°C to 200°C (TJ), this surface mount device is housed in a 3-SMD, No Lead (UBC) package and supplied on tape and reel. This component finds application in military and aerospace systems, as well as industrial control and high-reliability electronic equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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