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JANSF2N2484

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JANSF2N2484

TRANS NPN 60V 0.05A TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSF2N2484 is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. The JANSF2N2484 offers a minimum DC current gain (hFE) of 225 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 300mV for 100µA base current and 1mA collector current. Collector cutoff current (Ic) is a maximum of 2nA. The transistor is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. Operating temperature ranges from -65°C to 200°C. This device is qualified to MIL-PRF-19500/376, indicating its suitability for aerospace and defense systems, as well as other high-reliability industrial applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tray
Technical Details:
PackagingTray
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)2nA
DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA, 5V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)60 V
QualificationMIL-PRF-19500/376

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