JANSF2N2222AUB
TRANS NPN 50V 0.8A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSF2N2222AUB is a NPN Bipolar Junction Transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and can handle a continuous collector current of up to 800mA. With a maximum power dissipation of 500mW, it offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce) is specified at 1V maximum for a base current of 50mA and collector current of 500mA. This device is qualified to MIL-PRF-19500/255, indicating its suitability for demanding military applications. The JANSF2N2222AUB operates across a wide temperature range from -65°C to 200°C (TJ) and is supplied in a 4-SMD, No Lead UB package. Its robust specifications make it a reliable choice for switching and amplification circuits in aerospace, defense, and other high-reliability electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |