JANSF2N2222AUA
TRANS NPN 50V 0.8A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSF2N2222AUA is a bipolar junction transistor (BJT) with an NPN configuration. This military-grade component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. With a maximum power dissipation of 650mW and an operating temperature range from -65°C to 200°C, it is suitable for demanding applications. The device is supplied in a 4-SMD, No Lead (UA) package, ensuring efficient thermal performance for surface mounting. This component meets the rigorous qualification standards of MIL-PRF-19500/255. Its characteristics make it a reliable choice for use in aerospace, defense, and industrial equipment requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |