JANSF2N2222A
TRANS NPN 50V 0.8A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSF2N2222A is an NPN bipolar junction transistor designed for applications requiring high reliability and performance. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800 mA. It offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a saturation voltage (Vce(sat)) of 1V at 50mA/500mA. The device dissipates a maximum power of 500 mW and operates across a wide temperature range from -65°C to 200°C. Qualified to MIL-PRF-19500/255, this transistor is packaged in a TO-18 (TO-206AA) metal can, suitable for through-hole mounting. The JANSF2N2222A finds use in various military and high-reliability electronic systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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