JANSF2N2221AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSF2N2221AUA is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a 50V collector-emitter breakdown voltage and capable of handling up to 800mA continuous collector current, this device offers a maximum power dissipation of 650mW. The JANSF2N2221AUA is specified with a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a low collector cutoff current of 50nA maximum. Its surface mount UA package is suitable for automated assembly. This component operates across a wide temperature range of -65°C to 200°C and meets MIL-PRF-19500/255 qualification, making it ideal for aerospace, defense, and industrial systems requiring robust performance and long-term reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |