JANSD2N4449
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSD2N4449 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This MIL-PRF-19500/317 qualified component features a 15V collector-emitter breakdown voltage and a maximum power dissipation of 500mW. The TO-46-3 Metal Can package facilitates through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage, and a Vce(sat) of 450mV at 10mA base current and 100mA collector current. The collector cutoff current is rated at a maximum of 400nA. This device operates within a temperature range of -65°C to 200°C (TJ). Its robust construction and military-grade qualification make it suitable for use in aerospace, defense, and other high-reliability systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |
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