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JANSD2N3700UB

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JANSD2N3700UB

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSD2N3700UB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device features a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. The JANSD2N3700UB offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 500mW, it is suitable for operation across a wide temperature range from -65°C to 200°C. This component is qualified to MIL-PRF-19500/391, indicating its suitability for military and high-reliability applications. The UB package, a 3-SMD, No Lead configuration, facilitates efficient board space utilization. This device finds utility in various high-reliability electronic systems, including aerospace and defense.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/391

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