JANSD2N3700UB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSD2N3700UB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device features a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. The JANSD2N3700UB offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 500mW, it is suitable for operation across a wide temperature range from -65°C to 200°C. This component is qualified to MIL-PRF-19500/391, indicating its suitability for military and high-reliability applications. The UB package, a 3-SMD, No Lead configuration, facilitates efficient board space utilization. This device finds utility in various high-reliability electronic systems, including aerospace and defense.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
Request a Quote
Clients Also Buy
2N5347
PNP TRANSISTORS
JANSP2N3439L
RH POWER BJT
JAN2N918
TRANS NPN 15V 0.05A TO72
