JANSD2N3700
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N3700 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 1 A. It features a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. The transistor exhibits a saturation voltage (Vce(sat)) of 500 mV at 50 mA base current and 500 mA collector current. With a maximum power dissipation of 500 mW, the JANSD2N3700 is housed in a TO-18 (TO-206AA) metal can package for through-hole mounting. This device meets MIL-PRF-19500/391 qualification, indicating its suitability for military-grade applications. The operating temperature range is specified from -65°C to 200°C (TJ). This small-signal transistor is commonly utilized in high-reliability electronic systems and defense applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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