JANSD2N3637UB/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N3637UB-TR is a PNP bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/357, features a 175V collector-emitter breakdown voltage and a 1A maximum collector current. It offers a robust 1W power dissipation and operates across a wide temperature range of -65°C to 200°C (TJ). Key parameters include a minimum DC current gain (hFE) of 100 at 50mA and 10V, a maximum saturation voltage of 600mV at 5mA/50mA, and a low collector cutoff current of 10µA. The device is supplied in a UB package suitable for surface mounting, presented in tape and reel packaging for automated assembly. This transistor finds utility in power supply regulation, switching circuits, and amplification stages within aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |