JANSD2N3637UB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N3637UB is a PNP bipolar junction transistor (BJT) designed for demanding applications. This MIL-PRF-19500/357 qualified component offers a 175V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a power dissipation capability of 1W and a low saturation voltage of 600mV at 5mA base current and 50mA collector current. The DC current gain (hFE) is a minimum of 100 at 50mA collector current and 10V collector-emitter voltage. Operating within a temperature range of -65°C to 200°C, this surface-mount device is housed in a 3-SMD, No Lead UB package, supplied in bulk. Its robust specifications make it suitable for use in aerospace, defense, and other high-reliability electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |