JANSD2N3635UB
TRANS PNP 140V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N3635UB is a PNP bipolar junction transistor designed for demanding applications. This military-grade component features a 140V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 1.5W and a minimum DC current gain (hFE) of 100 at 10mA and 10V, it offers robust performance. The transistor exhibits a Vce(sat) of 600mV at 5mA base current and 50mA collector current, with a collector cutoff current of 10µA. Qualified to MIL-PRF-19500/357, the JANSD2N3635UB is suitable for use in aerospace and defense systems. It is supplied in a UB package for surface mounting and operates within a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1.5 W |
| Qualification | MIL-PRF-19500/357 |
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