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JANSD2N3635

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JANSD2N3635

TRANS PNP 140V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSD2N3635 is a PNP bipolar junction transistor designed for high-reliability applications. This component features a Vce breakdown voltage of 140V and a continuous collector current capability of 1A. With a maximum power dissipation of 1W, it is suitable for demanding operational environments. The device offers a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V Vce. The saturation voltage (Vce Sat) is specified at a maximum of 600mV at 5mA base current and 50mA collector current. This MIL-PRF-19500/357 qualified component is housed in a TO-39 (TO-205AD) metal can package, facilitating through-hole mounting. It operates across a temperature range of -65°C to 200°C. This transistor finds application in aerospace, defense, and industrial sectors requiring robust performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max1 W
QualificationMIL-PRF-19500/357

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