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JANSD2N3501UB/TR

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JANSD2N3501UB/TR

TRANS NPN 150V 0.3A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSD2N3501UB-TR is a high-reliability, military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, housed in a UB package and supplied on tape and reel, offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 300 mA. With a maximum power dissipation of 500 mW and a junction temperature range of -65°C to 200°C, it meets stringent MIL-PRF-19500/366 qualification standards. Key parameters include a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, and a saturation voltage (Vce(sat)) of 400 mV at 15 mA base current and 150 mA collector current. This component is suitable for use in aerospace, defense, and other critical industrial systems requiring robust performance under extreme operating conditions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max500 mW
QualificationMIL-PRF-19500/366

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