JANSD2N3501UB/TR
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N3501UB-TR is a high-reliability, military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, housed in a UB package and supplied on tape and reel, offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 300 mA. With a maximum power dissipation of 500 mW and a junction temperature range of -65°C to 200°C, it meets stringent MIL-PRF-19500/366 qualification standards. Key parameters include a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, and a saturation voltage (Vce(sat)) of 400 mV at 15 mA base current and 150 mA collector current. This component is suitable for use in aerospace, defense, and other critical industrial systems requiring robust performance under extreme operating conditions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |
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