JANSD2N3501L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N3501L is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a maximum collector-emitter breakdown voltage of 150 V and a continuous collector current of up to 300 mA. With a power dissipation capability of 1 W and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, it provides robust performance. The saturation voltage (Vce Sat) is a maximum of 400 mV at 15 mA base current and 150 mA collector current. This device meets military specifications, holding a MIL-PRF-19500/366 qualification, and operates across a wide temperature range from -65°C to 200°C. Its design is suitable for demanding environments found in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |