JANSD2N3057A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N3057A is an NPN bipolar junction transistor (BJT) offering 80V collector-emitter breakdown voltage and a continuous collector current of up to 1A. This military-grade component, qualified to MIL-PRF-19500/391, features a minimum DC current gain (hFE) of 100 at 150mA and 10V. With a maximum power dissipation of 500mW, it is housed in a TO-46 (TO-206AB) metal can package and is suitable for through-hole mounting. The device exhibits a Vce(sat) of 500mV at 50mA base current and 500mA collector current, and a collector cutoff current of 10nA. This transistor is commonly utilized in high-reliability applications across aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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