JANSD2N3019S
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N3019S is an NPN Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This through-hole device, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. With a power dissipation rating of 800mW and a wide operating temperature range of -65°C to 200°C, it is qualified to MIL-PRF-19500/391, indicating its suitability for military and high-reliability applications. Key parameters include a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage, and a Vce(sat) of 500mV at 50mA base current and 500mA collector current. The device exhibits a low collector cutoff current of 10nA. This component is commonly utilized in power switching, amplification, and control circuits across aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |