JANSD2N2907AUB/TR
TRANS PNP 60V 0.6A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology’s JANSD2N2907AUB-TR is a PNP bipolar junction transistor designed for demanding applications. This military-grade component features a 60V collector-emitter breakdown voltage and a continuous collector current of up to 600mA. With a maximum power dissipation of 500mW, it is suitable for surface mount configurations within a 3-SMD, No Lead UB package. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a collector cutoff current of 50nA. Vce Saturation is specified at a maximum of 1.6V for 50mA base current driving 500mA collector current. Qualified to MIL-PRF-19500/291, this device operates across a temperature range of -65°C to 200°C. The Tape & Reel (TR) packaging facilitates high-volume automated assembly. This component finds application in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5632
POWER BJT
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
