JANSD2N2369AUBC/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N2369AUBC-TR is an NPN bipolar junction transistor (BJT) designed for small-signal applications. This surface-mount device, packaged in a 3-SMD, No Lead (UBC) configuration on tape and reel, offers a collector-emitter breakdown voltage of 15 V. It features a maximum power dissipation of 360 mW and a Vce(sat) of 450mV at 10mA/100mA. The DC current gain (hFE) is a minimum of 20 at 100mA collector current and 1V Vce. Operating across an extended temperature range of -65°C to 200°C (TJ), this component is suitable for demanding environments. Its specifications make it applicable in various industrial and defense sectors requiring reliable amplification and switching at the component level.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
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