JANSD2N2369AUB/TR
TRANS NPN 20V UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N2369AUB-TR is a high-reliability NPN bipolar junction transistor designed for demanding applications. This component features a 20V collector-emitter breakdown voltage and a maximum power dissipation of 360mW. It offers a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage, with a Vce(sat) of 450mV at 10mA base current and 100mA collector current. The collector cutoff current is a maximum of 400nA. Qualified to MIL-PRF-19500/317, this device is suitable for military and harsh environment applications. The UB package is provided in Tape & Reel (TR) for automated assembly and operates across an extended temperature range of -65°C to 200°C. This transistor is commonly utilized in switching and amplification circuits within aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |