JANSD2N2369AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSD2N2369AUB is an NPN bipolar junction transistor designed for military-grade applications. This surface-mount device, packaged in a 3-SMD, No Lead (UB) configuration, offers a collector-emitter breakdown voltage of 20 V and a maximum power dissipation of 400 mW. It features a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage. The collector cutoff current is specified at a maximum of 400 nA. With an operating temperature range of -65°C to 200°C and MIL-PRF-19500/317 qualification, this component is suitable for demanding environments, including aerospace and defense systems. The Vce saturation is a maximum of 450 mV at 10 mA base current and 100 mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/317 |