JANSD2N2369A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N2369A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/317, features a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 500 mW. It offers a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V Vce. The saturated voltage (Vce Sat) is a maximum of 450mV at 10mA base current and 100mA collector current. With a low collector cutoff current of 400nA, this transistor is suitable for RF and switching applications. It is packaged in a TO-18 (TO-206AA) metal can, designed for through-hole mounting. The operating temperature range is -65°C to 200°C. This component finds use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |
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