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JANSD2N2222AUBC

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JANSD2N2222AUBC

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSD2N2222AUBC is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA, with a power dissipation rating of 500mW. It features a minimum DC current gain (hFE) of 100 at 150mA and 10V. The JANSD2N2222AUBC is qualified to MIL-PRF-19500/255, indicating its suitability for military and aerospace applications. Operating across a wide temperature range of -65°C to 200°C, its UBC package is provided in bulk. This component is commonly utilized in high-reliability switching and amplification circuits within defense, industrial, and aerospace sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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