JANSD2N2222AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N2222AL is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This Military-grade component, qualified to MIL-PRF-19500/255, features a through-hole TO-18 (TO-206AA) metal can package. It offers a maximum collector emitter breakdown voltage of 50 V and a continuous collector current capability of 800 mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. Its maximum power dissipation is rated at 500 mW, with a collector cutoff current of 50 nA and a Vce saturation of 1 V at 50 mA collector current. The operating temperature range is -65°C to 200°C. This component is commonly utilized in aerospace, defense, and industrial sectors requiring robust performance under demanding environmental conditions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |