JANSD2N2221AUBC/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N2221AUBC-TR is an NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a collector-emitter breakdown voltage of 50V and a continuous collector current of 800mA, this device excels in switching and amplification circuits. The 500mW power dissipation capability and a wide operating temperature range of -65°C to 200°C make it suitable for military and high-reliability environments. Key parameters include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 1V at 50mA/500mA. Supplied in a 3-SMD, No Lead (UBC) package on tape and reel, this component meets MIL-PRF-19500/255 qualification. Its robust design finds application in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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