JANSD2N2221AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N2221AUB is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface-mount device, presented in a UB package, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 800mA. It features a power dissipation rating of 500mW and a significant DC current gain (hFE) of 40 minimum at 150mA and 10V. The saturation voltage is specified at a maximum of 1V for 50mA base current and 500mA collector current. Operating across an extended temperature range of -65°C to 200°C (TJ), this transistor meets the rigorous demands of MIL-PRF-19500/255 qualification, making it suitable for military and aerospace applications. Its robust construction and performance characteristics also find utility in industrial control and high-temperature electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |