JANSD2N2221AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N2221AL is an NPN bipolar junction transistor (BJT) designed for robust performance. This component features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 800 mA. With a power dissipation of 500 mW, it is suitable for applications requiring reliable signal amplification. The JANSD2N2221AL exhibits a minimum DC current gain (hFE) of 40 at 150 mA and 10 V. Its saturation voltage (Vce Sat) is a maximum of 1V at 50mA base current and 500mA collector current. The transistor type is NPN, and it is qualified to MIL-PRF-19500/255 standards, indicating its suitability for demanding military and aerospace applications. The component is housed in a TO-18 (TO-206AA) metal can package, facilitating through-hole mounting. Operating temperature ranges from -65°C to 200°C (TJ). This device is available in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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