JANSD2N2221A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSD2N2221A is an NPN bipolar junction transistor designed for demanding applications. This MIL-PRF-19500/255 qualified component offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 800 mA, with a power dissipation of 500 mW. It features a minimum DC current gain (hFE) of 40 at 150 mA and 10 V. The transistor exhibits a Vce(sat) of 1 V at 50 mA and 500 mA, and a collector cutoff current of 50 nA. Packaged in a TO-18 (TO-206AA) metal can for through-hole mounting, the JANSD2N2221A operates across a wide temperature range of -65°C to 200°C. This device is suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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