JANSD2N2219A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSD2N2219A is an NPN bipolar junction transistor (BJT) designed for small-signal amplification and switching applications. This through-hole component, packaged in a TO-39 (TO-205AD) metal can, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current (Ic) of 800mA. It features a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 1V at 50mA base current and 500mA collector current, with a collector cutoff current (Icbo) specified at a maximum of 10nA. This device operates across a wide temperature range of -55°C to 200°C. It is commonly utilized in industrial control, defense, and aerospace sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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