JANSD2N2219
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSD2N2219 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This JAN-qualified component (MIL-PRF-19500/251) features a 50V collector-emitter breakdown voltage and a continuous collector current of up to 800mA. With a maximum power dissipation of 800mW, it is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1.6V at 50mA and 500mA. Operating across a wide temperature range of -55°C to 200°C, this transistor finds use in military and aerospace systems, as well as high-reliability industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5347
PNP TRANSISTORS
JANSG2N2222AUBC/TR
RH SMALL-SIGNAL BJT
