JANS2N918
TRANS NPN 15V 0.05A TO72Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N918 is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 15V collector-emitter breakdown voltage and a maximum collector current of 50 mA. With a minimum DC current gain (hFE) of 20 at 3mA and 1V, and a collector cutoff current of 1µA (ICBO), it offers predictable performance. The JANS2N918 dissipates a maximum power of 200 mW and operates over an extended temperature range of -65°C to 200°C. Packaged in a TO-72 (TO-206AF) metal can, this through-hole mounted device is suitable for military-grade applications, conforming to MIL-PRF-19500/301 qualification. Its saturated voltage is a maximum of 400mV at 1mA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-72 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |
| Qualification | MIL-PRF-19500/301 |